JASCO's Supercritical CO2 Photo Resist Stripping and Wafer Cleaning System offers excellent performance as a cleaning solvent in the photoresist stripping/cleaning/drying processes due to unique properties such as low viscosity, high diffusivity, high permeability and no surface tension.
The complexity of integrated circuits has been increasing as lithography technology improves. In order to achieve pattern widths in the sub-micrometer range, the method of photoresist stripping and cleaning of silicon wafers is critical.
In addition, the fluid becomes a gas when reducing the pressure to atmospheric at ambient temperature. A liquid solvent can often collapse microstructures with a high aspect ratio due to its high surface tension. On the other hand, supercritical CO2 has no liquid-gas phase boundary and no surface tension occurs, therefore, the fluid can penetrate into microstructures without damaging the lithography pattern.
This preparative scale supercritical fluid extraction (SFE) system using carbon dioxide is equipped with a pump and back-pressure regulator to enable delivery of up to 150 ml/min of CO2, and is also equipped with a 1 liter extraction vessel.
Perfluoropolyether (PFPE) is a lubricant widely used in many aerospace, vacuum, electronic and semiconductor applications due to its excellent chemical and tribological properties. It is typically used for friction reducing films on hard disks. In order to obtain a greater amount of functional PFPE, supercritical carbon dioxide extraction systems can refine and separate wide molecular weight distribution PFPE mixtures into a higher performance PFPE with a narrower molecular weight distribution.
The table outlines various PFPE fractions with narrow molecular weight distributions based on items such as polydispersity, 1.18 to 1.28.