The thickness of the epitaxial layer, substrate, etching (residual layer), liquid crystal cell gap, and other semiconductor layers dramatically impacts semiconductor device performance. Management of layer thickness during the manufacturing process is extremely crucial for production of large yields of stable devices.
Utilizing a proprietary frequency analysis method, the sample interference spectrum is converted to a spatialgram and the film thickness calculated with a high degree of accuracy. This integrated system offers the film thickness measurements required for the exacting standards of the semiconductor industry including high-speed sample mapping; a wide thickness measurement range; and a refined operating environment, supporting a wide range of analysis requirements from process use to R&D.
JASCO offers near-infrared and midinfrared models according to the thickness measurements desired.
Wide range of film thickness measurement capability
Enables film thickness (substrate thickness) measurements from 0.25 to 750 µm.
Highly accurate film thickness measurements
Acquisition of precision data using a high-accuracy interferometer and high throughput optics.
Support for multi-wafer cassettes
0ptional automated cassette sampling system, enabling fully automated measurement for wafer cassettes.
Simplified operating system
Various conditions for measurement, mapping, and film thickness calculations are configured as preset recipes and managed in a recipe table. Measurement of film thickness is initiated by simply selecting a required method from the recipe table and clicking the 'Measure' button.